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| FP7G75US60 Transfer Molded Type IGBT Module July 2008 FP7G75US60 Transfer Molded Type IGBT Module General Description Fairchild's New IGBT Modules ( Transfer Molded Type ) provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as Motor control, Uninterrupted Power Supplies (UPS) and general Inverters where short circuit ruggedness is a required feature. Power-SPMTM tm Features * Short Circuit rated 10us @Tc=100C, Vge=15V * High Speed Switching * Low Saturation Voltage : Vce(sat) =2.2V @Ic=75A * High Input Impedance * Fast & Soft Anti-Parallel FWD Package Code : EPM7 1 Application * Welders * AC & DC Motor Controls * General Purpose Inverters * Robotics * Servo Controls * UPS 3 2 4 5 6 7 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5 Rating 600 20 75 150 75 150 10 310 -40 to +125 -40 to +125 2500 2.0 2.0 Units V V A A A A us W C C V N.m N.m @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ AC 1minute (c)2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FP7G75US60 Rev. A FP7G75US60 Transfer Molded Type IGBT Module Pin Configuration and Pin Description Top View 1 3 2 4 5 6 7 Internal Circuit Diagram Pin Description Pin Number 1 2 3 4 5 6 7 Pin Description Emitter of Q1, IGBT, Collector of Q2, IGBT Emitter of Q2, IGBT Collector of Q1, IGBT Gate of Q1, IGBT Emitter of Q1, IGBT Gate of Q2, IGBT Emitter of Q2, IGBT FP7G75US60 Rev. A 2 www.fairchildsemi.com FP7G75US60 Transfer Molded Type IGBT Module Electrical Characteristics (TJ = 25C, Symbol Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Unless Otherwise Specified) Parameter Conditions Min Typ Max Units VGE= 0V, IC = 250A 600 - 0.6 - 250 100 V V uA nA Temperature Coeff. of Breakdown Voltage VGE= 0V, IC = 1mA Collector Cut-off Current Gate-Emitter Leakage Current VCE= VCES, VGE= 0V VGE= VGES, VCE= 0V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage VGE = 0V, IC=75mA IC = 75A, VGE = 15V 5.0 6.0 2.2 8.5 2.8 V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Capacitance VCE = 30V, VGE = 0V, f = 1MHz 4515 550 100 -pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 300 V, IC = 75A, VGE = 15V VCC = 300 V, VGE = 15V @ TC = 100C VCC = 300 V, IC = 75A, RG = 3.3, VGE = 15V Inductive Load, TC = 125C VCC = 300 V, IC = 75A, RG = 3.3, VGE = 15V Inductive Load, TC = 25C 10 33 29 92 91 0.75 0.72 1.47 27 22 96 197 0.73 1.47 2.2 205 40 115 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC FP7G75US60 Rev. A 3 www.fairchildsemi.com FP7G75US60 Transfer Molded Type IGBT Module Electrical Characteristics of DIODE (TJ = 25C, Symbol VFM Unless Otherwise Specified) Parameter Diode Forward Voltage IF = 75A Conditions TC = 25C TC = 100C TC = 25C Min Typ Max Units 1.9 1.8 78 156 5.7 10 222 nC 780 7.5 A 2.8 V 112 ns trr Diode Reverse Recovery Time TC = 100C Diode Peak Reverse Recovery Current IF = 75A di / dt = 150 A/us TC = 25C TC = 100C TC = 25C Diode Reverse Recovery Charge TC = 100C Irr Qrr Thermal Characteristics Symbol RJC RJC RCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink Weight of Module (Conductive grease applied) Typ. 0.05 - Max. 0.32 0.9 90 Units C/W C/W C/W g FP7G75US60 Rev. A 4 www.fairchildsemi.com FP7G75US60 Transfer Molded Type IGBT Module Typical Performance Characteristics Fig 1. Typical Output Characteristics 200 Fig 2. Typical Saturation Voltage Characteristics 200 IC, Collector Current[A] 20V 15V IC, Collector Current[A] 160 120 80 12V Common Emitter VGE = 15V TC = 25 C TC = 125 C o o 160 120 80 40 V GE = 10V 40 0 0 2 4 Common Emitter o TC = 25 C 6 8 0 0.3 1 10 20 V CE , Collector-Emitter Voltage[V] VCE, Collector-Emitter Voltage[V] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level VCE, Collector-Emitter Voltage[V] 5 Com m on Em itter V G E = 15V 150A Fig 4. Load Current vs. Frequency 120 V CC = 300V Load Current : peak of square wave Load Current [A] 4 3 100 80 60 40 20 Duty cycle : 50% o T C = 100 C Power Dissipation = 130W 75A 2 1 0 0 50 100 o I C = 40A 150 0 0.1 1 10 100 1000 T C , Case Tem perature[ C] Frequency [Khz] Fig 5. Saturation Voltage vs. VGE VCE, Collector-Emitter Voltage[V] Fig 6. Saturation Voltage vs. VGE VCE, Collector-Emitter Voltage[V] 20 16 12 8 4 IC = 40A 150A 75A 20 16 12 8 150A Common Emitter o TC = 25 C Common Emitter o TC = 25 C 4 IC = 40A 75A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 VGE, Gate-Emitter Voltage[V] VGE, Gate-Emitter Voltage[V] FP7G75US60 Rev. A 5 www.fairchildsemi.com FP7G75US60 Transfer Molded Type IGBT Module Fig 7. Capacitance Characteristics 9000 Cies Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Switching Time[ns] Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A TC = 25 C TC = 125 C Tr o o Common Emitter VGE = 0V, f = 1MHz T C = 25 C o Capacitance[pF] Ton 6000 Coes 100 3000 Cres 0 0.5 10 1 10 30 1 VCE, Collector-Emitter Voltage[V] 10 RG, Gate Resistance[] Fig 9. Turn-Off Characteristics vs. Gate Resistance 5000 Switching Time[ns] Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A T C = 25 C T C = 125 C o o Fig 10. Switching Loss vs. Gate Resistance 100 Switching Loss[mJ] Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A 1000 Toff 10 TC = 25 C TC = 125 C Eon o o Tf 100 Tf 1 Eoff 10 1 10 RG, Gate Resistance[] 50 0.1 1 10 RG, Gate Resistance[] Fig 11. Turn-On Characteristics vs. Collector Current 10000 1000 Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A TC = 25 C TC = 125 C o Fig 12. Turn-Off Characteristics vs. Collector Current Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A TC = 25 C TC = 125 C Toff o o Switching Time[ns] 100 Ton Switching Time[ns] o 1000 Tr 100 Tf 10 Tf 1 20 40 60 80 100 120 IC, Collector Current[A] 140 10 20 40 60 80 100 120 140 IC, Collector Current[A] FP7G75US60 Rev. A 6 www.fairchildsemi.com FP7G75US60 Transfer Molded Type IGBT Module Fig 13. Switching Loss vs. Collector 100 VGE, Gate-Emitter Voltage[V] Common Emitter VCC = 300V, VGE = +/- 15V IC = 75A Fig 14. Gate Charge Characteristics 15 300 V 12 200 V Switching Loss[mJ] 10 TC = 25 C TC = 125 C Eoff o o 9 6 3 0 0 V CC = 100 V 1 Eon Common Emitter RL = 4 TC = 25 C o 0.1 20 40 60 80 100 120 140 IC, Collector Current[A] 100 200 Q g, Gate Charge[nC] Fig 15. SOA Characteristics 500 IC MAX. (Pulsed) Fig 16. Turn-Off SOA Characteristics IC, Collector Current[A] IC MAX. (Continuous) 100us 1ms 50us 10 DC Operation IC, Collector Current[A] 100 100 10 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linerarly with increase in temperature 0.1 0.3 1 10 100 1000 1 1 10 Safe Operating Area o VGE = 20V, TC = 100 C 100 1000 VCE, Collector-Emitter Voltage[V] VCE, Collector-Emitter Voltage[V] Fig 17. RBSOA Characteristics Thermal Response, Zthjc[ C/W] Fig 18. Transient Thermal Impedance 1 600 IC, Collector Current[A] 100 o Single Nonrepetitive o Pulse TJ = 125 C VGE = 15V RG = 3.3 0.1 10 1 0.01 TC = 25 C IGBT : DIODE : o 0.1 0 100 200 300 400 500 600 700 VCE, Collector-Emitter Voltage[V] 1E-3 -5 10 10 10 10 10 10 10 Rectangular Pulse Duration[sec] -4 -3 -2 -1 0 1 FP7G75US60 Rev. A 7 www.fairchildsemi.com FP7G75US60 Transfer Molded Type IGBT Module Fig 19. Forward Characteristics 200 IF, Forward Current[A] Common Cathode VGE = 0V TC = 25 C TC = 125 C o o Fig 20. Reverse Recovery Characteristics Irr, Peak Reverse Recovery Current[A] Trr, Reverse Recovery Time[x10ns] 30 Trr 150 10 Irr Trr Irr 100 50 Common Cathode di/dt = 150A/us o TC = 25 C TC = 100 C o 0 0 1 2 3 4 VF, Forward Voltage[V] 1 0 20 40 60 80 IF, Forward Current[A] FP7G75US60 Rev. A 8 www.fairchildsemi.com FP7G75US60 Transfer Molded Type IGBT Module 23.500.50 23.000.50 23.000.50 16.220.50 5.080.50 0.80+0.10 -0.05 18.400.50 14.50+0.50 -0.80 (5) 10.000.10 (R 2.7 5) 1.000.10 1 2 3 7 6 35.000.50 38.801.00 0) 1.0 (R 25.000.20 (14) 17.500.30 (14) 0 (9 ) 5 4 10.000.50 (R 80.000.30 93.000.50 1. 65 ) 9.600.10 12.200.30 (10.00) (6.50) (7 ) (10.00) (14.00) (9.00) (14.00) (9.00) (14.00) (6.50) 10.400.30 (5) FP7G75US60 Rev. A 9 12.200.30 www.fairchildsemi.com FP7G75US60 Transfer Molded Type IGBT Module TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FP7G75US60 Rev. A 10 www.fairchildsemi.com |
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